Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer

The SrZrTiO(3) (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film...

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Detalles Bibliográficos
Autores principales: Lee, Ke-Jing, Lin, Wei-Shao, Wang, Li-Wen, Lin, Hsin-Ni, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782405/
https://www.ncbi.nlm.nih.gov/pubmed/36558265
http://dx.doi.org/10.3390/nano12244412
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author Lee, Ke-Jing
Lin, Wei-Shao
Wang, Li-Wen
Lin, Hsin-Ni
Wang, Yeong-Her
author_facet Lee, Ke-Jing
Lin, Wei-Shao
Wang, Li-Wen
Lin, Hsin-Ni
Wang, Yeong-Her
author_sort Lee, Ke-Jing
collection PubMed
description The SrZrTiO(3) (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10(7), lower operation voltage (V(SET) = −0.8 V and V(RESET) = 2.05 V), uniform film, and device stability of more than 10(5) s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.
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spelling pubmed-97824052022-12-24 Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer Lee, Ke-Jing Lin, Wei-Shao Wang, Li-Wen Lin, Hsin-Ni Wang, Yeong-Her Nanomaterials (Basel) Article The SrZrTiO(3) (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10(7), lower operation voltage (V(SET) = −0.8 V and V(RESET) = 2.05 V), uniform film, and device stability of more than 10(5) s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed. MDPI 2022-12-10 /pmc/articles/PMC9782405/ /pubmed/36558265 http://dx.doi.org/10.3390/nano12244412 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lee, Ke-Jing
Lin, Wei-Shao
Wang, Li-Wen
Lin, Hsin-Ni
Wang, Yeong-Her
Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer
title Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer
title_full Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer
title_fullStr Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer
title_full_unstemmed Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer
title_short Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer
title_sort resistive switching memory cell property improvement by al/srzrtio(3)/al/srzrtio(3)/ito with embedded al layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782405/
https://www.ncbi.nlm.nih.gov/pubmed/36558265
http://dx.doi.org/10.3390/nano12244412
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