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Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO(3)/Al/SrZrTiO(3)/ITO with Embedded Al Layer

The SrZrTiO(3) (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film...

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Detalles Bibliográficos
Autores principales:	Lee, Ke-Jing, Lin, Wei-Shao, Wang, Li-Wen, Lin, Hsin-Ni, Wang, Yeong-Her
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9782405/ https://www.ncbi.nlm.nih.gov/pubmed/36558265 http://dx.doi.org/10.3390/nano12244412

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