Cargando…
Tunable Gain SnS(2)/InSe Van der Waals Heterostructure Photodetector
Due to the favorable properties of two-dimensional materials such as SnS(2,) with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS(2)/InSe Va...
Autores principales: | Hosseini, Seyedali, Iraji zad, Azam, Mahdavi, Seyed Mohammad, Esfandiar, Ali |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9783600/ https://www.ncbi.nlm.nih.gov/pubmed/36557365 http://dx.doi.org/10.3390/mi13122068 |
Ejemplares similares
-
High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
por: Mudd, Garry W., et al.
Publicado: (2015) -
Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures
por: Cho, Sang-Hoo, et al.
Publicado: (2021) -
Vertical WS(2)/SnS(2) van der Waals Heterostructure for Tunneling Transistors
por: Wang, Jiaxin, et al.
Publicado: (2018) -
The Interaction of Hydrogen with the van der Waals Crystal γ-InSe
por: Felton, James, et al.
Publicado: (2020) -
InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening
por: Ma, Zechen, et al.
Publicado: (2021)