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The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics

The paper considers the new effects of the nanoscale state of matter, which open up prospects for the development of electronic devices using new physical principles. The contacts of chemically homogeneous nanoparticles of yttrium-stabilized zirconium oxide (ZrO(2)—x mol% Y(2)O(3), x = 0, 3, 4, 8; Y...

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Autores principales: Doroshkevich, Alexander S., Zakharova, Anna S., Oksengendler, Boris L., Lyubchyk, Andriy I., Lyubchyk, Sergiy I., Lyubchyk, Svitlana B., Tatarinova, Alisa A., Kirillov, Andriy K., Vasilenko, Tatyana A., Gorban, Oksana O., Bodnarchuk, Viktor I., Nikiforova, Nadejda N., Zakharova, Elena A., Balasoiu, Maria, Mardare, Diana M., Mita, Carmen, Stanculescu, Anca, Mirzayev, Matlab N., Nabiyev, Asif A., Popov, Evgeni P., Khiem, Le Hong, Donkov, Alexander A., Teofilović, Vesna, Jasinska, Bozena, Chicea, Dan, Konstantinova, Tatyana Ye.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784216/
https://www.ncbi.nlm.nih.gov/pubmed/36558348
http://dx.doi.org/10.3390/nano12244493
_version_ 1784857757302652928
author Doroshkevich, Alexander S.
Zakharova, Anna S.
Oksengendler, Boris L.
Lyubchyk, Andriy I.
Lyubchyk, Sergiy I.
Lyubchyk, Svitlana B.
Tatarinova, Alisa A.
Kirillov, Andriy K.
Vasilenko, Tatyana A.
Gorban, Oksana O.
Bodnarchuk, Viktor I.
Nikiforova, Nadejda N.
Zakharova, Elena A.
Balasoiu, Maria
Mardare, Diana M.
Mita, Carmen
Stanculescu, Anca
Mirzayev, Matlab N.
Nabiyev, Asif A.
Popov, Evgeni P.
Khiem, Le Hong
Donkov, Alexander A.
Teofilović, Vesna
Jasinska, Bozena
Chicea, Dan
Konstantinova, Tatyana Ye.
author_facet Doroshkevich, Alexander S.
Zakharova, Anna S.
Oksengendler, Boris L.
Lyubchyk, Andriy I.
Lyubchyk, Sergiy I.
Lyubchyk, Svitlana B.
Tatarinova, Alisa A.
Kirillov, Andriy K.
Vasilenko, Tatyana A.
Gorban, Oksana O.
Bodnarchuk, Viktor I.
Nikiforova, Nadejda N.
Zakharova, Elena A.
Balasoiu, Maria
Mardare, Diana M.
Mita, Carmen
Stanculescu, Anca
Mirzayev, Matlab N.
Nabiyev, Asif A.
Popov, Evgeni P.
Khiem, Le Hong
Donkov, Alexander A.
Teofilović, Vesna
Jasinska, Bozena
Chicea, Dan
Konstantinova, Tatyana Ye.
author_sort Doroshkevich, Alexander S.
collection PubMed
description The paper considers the new effects of the nanoscale state of matter, which open up prospects for the development of electronic devices using new physical principles. The contacts of chemically homogeneous nanoparticles of yttrium-stabilized zirconium oxide (ZrO(2)—x mol% Y(2)O(3), x = 0, 3, 4, 8; YSZ) with different sizes of 7.5 nm and 9 nm; 7.5 nm and 11 nm; and 7.5 nm and 14 nm, respectively, was studied on direct current using nanostructured objects in the form of compacts obtained by high-hydrostatic pressure (HP-compacts of 300MPa). A unique size effect of the nonlinear (rectifying-type contact) dependence of the electrical properties (in the region U < 2.5 V, I ≤ 2.7 mA) of the contact of different-sized YSZ nanoparticles of the same chemical composition is revealed, which indicates the possibility of creating semiconductor structures of a new type (homogeneous electronics). The electronic structure of the near-surface regions of nanoparticles of studied oxide materials and the possibility of obtaining specifically rectifying properties of the contacts were studied theoretically. Models of surface states of the Tamm-type are constructed considering the Coulomb long-range action. The discovered energy variance and its dependence on the curvature of the surface of nanoparticles made it possible to study the conditions for the formation of a contact potential difference in cases of nanoparticles of the same radius (synergistic effect), different radii (doped and undoped variants), as well as to discover the possibility of describing a group of powder particles within the Anderson model. The determined effect makes it possible to solve the problem of diffusion instability of semiconductor heterojunctions and opens up prospects for creating electronic devices with a fundamentally new level of properties for use in various fields of the economy and breakthrough critical technologies.
format Online
Article
Text
id pubmed-9784216
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-97842162022-12-24 The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics Doroshkevich, Alexander S. Zakharova, Anna S. Oksengendler, Boris L. Lyubchyk, Andriy I. Lyubchyk, Sergiy I. Lyubchyk, Svitlana B. Tatarinova, Alisa A. Kirillov, Andriy K. Vasilenko, Tatyana A. Gorban, Oksana O. Bodnarchuk, Viktor I. Nikiforova, Nadejda N. Zakharova, Elena A. Balasoiu, Maria Mardare, Diana M. Mita, Carmen Stanculescu, Anca Mirzayev, Matlab N. Nabiyev, Asif A. Popov, Evgeni P. Khiem, Le Hong Donkov, Alexander A. Teofilović, Vesna Jasinska, Bozena Chicea, Dan Konstantinova, Tatyana Ye. Nanomaterials (Basel) Article The paper considers the new effects of the nanoscale state of matter, which open up prospects for the development of electronic devices using new physical principles. The contacts of chemically homogeneous nanoparticles of yttrium-stabilized zirconium oxide (ZrO(2)—x mol% Y(2)O(3), x = 0, 3, 4, 8; YSZ) with different sizes of 7.5 nm and 9 nm; 7.5 nm and 11 nm; and 7.5 nm and 14 nm, respectively, was studied on direct current using nanostructured objects in the form of compacts obtained by high-hydrostatic pressure (HP-compacts of 300MPa). A unique size effect of the nonlinear (rectifying-type contact) dependence of the electrical properties (in the region U < 2.5 V, I ≤ 2.7 mA) of the contact of different-sized YSZ nanoparticles of the same chemical composition is revealed, which indicates the possibility of creating semiconductor structures of a new type (homogeneous electronics). The electronic structure of the near-surface regions of nanoparticles of studied oxide materials and the possibility of obtaining specifically rectifying properties of the contacts were studied theoretically. Models of surface states of the Tamm-type are constructed considering the Coulomb long-range action. The discovered energy variance and its dependence on the curvature of the surface of nanoparticles made it possible to study the conditions for the formation of a contact potential difference in cases of nanoparticles of the same radius (synergistic effect), different radii (doped and undoped variants), as well as to discover the possibility of describing a group of powder particles within the Anderson model. The determined effect makes it possible to solve the problem of diffusion instability of semiconductor heterojunctions and opens up prospects for creating electronic devices with a fundamentally new level of properties for use in various fields of the economy and breakthrough critical technologies. MDPI 2022-12-19 /pmc/articles/PMC9784216/ /pubmed/36558348 http://dx.doi.org/10.3390/nano12244493 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Doroshkevich, Alexander S.
Zakharova, Anna S.
Oksengendler, Boris L.
Lyubchyk, Andriy I.
Lyubchyk, Sergiy I.
Lyubchyk, Svitlana B.
Tatarinova, Alisa A.
Kirillov, Andriy K.
Vasilenko, Tatyana A.
Gorban, Oksana O.
Bodnarchuk, Viktor I.
Nikiforova, Nadejda N.
Zakharova, Elena A.
Balasoiu, Maria
Mardare, Diana M.
Mita, Carmen
Stanculescu, Anca
Mirzayev, Matlab N.
Nabiyev, Asif A.
Popov, Evgeni P.
Khiem, Le Hong
Donkov, Alexander A.
Teofilović, Vesna
Jasinska, Bozena
Chicea, Dan
Konstantinova, Tatyana Ye.
The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics
title The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics
title_full The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics
title_fullStr The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics
title_full_unstemmed The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics
title_short The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics
title_sort rectifying contact of hydrated different size ysz nanoparticles for advanced electronics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784216/
https://www.ncbi.nlm.nih.gov/pubmed/36558348
http://dx.doi.org/10.3390/nano12244493
work_keys_str_mv AT doroshkevichalexanders therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT zakharovaannas therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT oksengendlerborisl therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT lyubchykandriyi therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT lyubchyksergiyi therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT lyubchyksvitlanab therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT tatarinovaalisaa therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT kirillovandriyk therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT vasilenkotatyanaa therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT gorbanoksanao therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT bodnarchukviktori therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT nikiforovanadejdan therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT zakharovaelenaa therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT balasoiumaria therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT mardaredianam therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT mitacarmen therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT stanculescuanca therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT mirzayevmatlabn therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT nabiyevasifa therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT popovevgenip therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT khiemlehong therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT donkovalexandera therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT teofilovicvesna therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT jasinskabozena therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT chiceadan therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT konstantinovatatyanaye therectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT doroshkevichalexanders rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT zakharovaannas rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT oksengendlerborisl rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT lyubchykandriyi rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT lyubchyksergiyi rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT lyubchyksvitlanab rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT tatarinovaalisaa rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT kirillovandriyk rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT vasilenkotatyanaa rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT gorbanoksanao rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT bodnarchukviktori rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT nikiforovanadejdan rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT zakharovaelenaa rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT balasoiumaria rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT mardaredianam rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT mitacarmen rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT stanculescuanca rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT mirzayevmatlabn rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT nabiyevasifa rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT popovevgenip rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT khiemlehong rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT donkovalexandera rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT teofilovicvesna rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT jasinskabozena rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT chiceadan rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics
AT konstantinovatatyanaye rectifyingcontactofhydrateddifferentsizeysznanoparticlesforadvancedelectronics