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Phase Formation Behavior and Thermoelectric Transport Properties of S-Doped FeSe(2−x)S(x) Polycrystalline Alloys
Some transition-metal dichalcogenides have been actively studied recently owing to their potential for use as thermoelectric materials due to their superior electronic transport properties. Iron-based chalcogenides, FeTe(2), FeSe(2) and FeS(2), are narrow bandgap (~1 eV) semiconductors that could be...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784414/ https://www.ncbi.nlm.nih.gov/pubmed/36557364 http://dx.doi.org/10.3390/mi13122066 |
Sumario: | Some transition-metal dichalcogenides have been actively studied recently owing to their potential for use as thermoelectric materials due to their superior electronic transport properties. Iron-based chalcogenides, FeTe(2), FeSe(2) and FeS(2), are narrow bandgap (~1 eV) semiconductors that could be considered as cost-effective thermoelectric materials. Herein, the thermoelectric and electrical transport properties FeSe(2)–FeS(2) system are investigated. A series of polycrystalline samples of the nominal composition of FeSe(2−x)S(x) (x = 0, 0.2, 0.4, 0.6, and 0.8) samples are synthesized by a conventional solid-state reaction. A single orthorhombic phase of FeSe(2) is successfully synthesized for x = 0, 0.2, and 0.4, while secondary phases (Fe(7)S(8) or FeS(2)) are identified as well for x = 0.6 and 0.8. The lattice parameters gradually decrease gradually with S content increase to x = 0.6, suggesting that S atoms are successfully substituted at the Se sites in the FeSe(2) orthorhombic crystal structure. The electrical conductivity increases gradually with the S content, whereas the positive Seebeck coefficient decreases gradually with the S content at 300 K. The maximum power factor of 0.55 mW/mK(2) at 600 K was seen for x = 0.2, which is a 10% increase compared to the pristine FeSe(2) sample. Interestingly, the total thermal conductivity at 300 K of 7.96 W/mK (x = 0) decreases gradually and significantly to 2.58 W/mK for x = 0.6 owing to the point-defect phonon scattering by the partial substitution of S atoms at the Se site. As a result, a maximum thermoelectric figure of merit of 0.079 is obtained for the FeSe(1.8)S(0.2) (x = 0.2) sample at 600 K, which is 18% higher than that of the pristine FeSe(2) sample. |
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