Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

The results of the study of the influence of Fe segregation into the unintentionally doped GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on the electrical properties of two-dimensional electron gas are presented. A set of several samples was grown by metal-organi...

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Detalles Bibliográficos
Autores principales: Arteev, Dmitri S., Sakharov, Alexei V., Lundin, Wsevolod V., Zavarin, Evgenii E., Nikolaev, Andrey E., Tsatsulnikov, Andrey F., Ustinov, Viktor M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784899/
https://www.ncbi.nlm.nih.gov/pubmed/36556750
http://dx.doi.org/10.3390/ma15248945

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9784899/
https://www.ncbi.nlm.nih.gov/pubmed/36556750
http://dx.doi.org/10.3390/ma15248945

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