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Ultrafast Temporal-Spatial Dynamics of Phase Transition in N-Doped Ge(2)Sb(2)Te(5) Film Induced by Femtosecond Laser Pulse Irradiation

Element-doped phase change material (PCM) could improve the performances, e.g., better thermal stability, higher electrical resistance, and faster crystallization speed; thus, the influence of the doping element needs to be further investigated. In this paper, a femtosecond laser, which could realiz...

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Detalles Bibliográficos
Autores principales: Wu, Hao, Zhang, Xiaobin, Han, Weina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785651/
https://www.ncbi.nlm.nih.gov/pubmed/36557466
http://dx.doi.org/10.3390/mi13122168