Cargando…
Ultrafast Temporal-Spatial Dynamics of Phase Transition in N-Doped Ge(2)Sb(2)Te(5) Film Induced by Femtosecond Laser Pulse Irradiation
Element-doped phase change material (PCM) could improve the performances, e.g., better thermal stability, higher electrical resistance, and faster crystallization speed; thus, the influence of the doping element needs to be further investigated. In this paper, a femtosecond laser, which could realiz...
Autores principales: | Wu, Hao, Zhang, Xiaobin, Han, Weina |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785651/ https://www.ncbi.nlm.nih.gov/pubmed/36557466 http://dx.doi.org/10.3390/mi13122168 |
Ejemplares similares
-
Ultrafast Dynamics of Different Phase States Ge(2)Sb(2)Te(5) Film Induced by a Femtosecond Laser Pulse Irradiation
por: Wu, Hao, et al.
Publicado: (2022) -
Crystallization of Ge(2)Sb(2)Te(5) thin films by nano- and femtosecond single laser pulse irradiation
por: Sun, Xinxing, et al.
Publicado: (2016) -
Artificial Anisotropy in Ge(2)Sb(2)Te(5) Thin Films after Femtosecond Laser Irradiation
por: Kolchin, Aleksandr, et al.
Publicado: (2022) -
Pulsed laser deposited GeTe-rich GeTe-Sb(2)Te(3) thin films
por: Bouška, M., et al.
Publicado: (2016) -
Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation
por: Bulai, Georgiana, et al.
Publicado: (2019)