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Structure Evolution and Properties Modification for Reaction-Bonded Silicon Carbide

Complex structure reaction-bonded silicon carbide (RB-SiC) can be prepared by reactive melt infiltration (RMI) and digital light processing (DLP). However, the strength and modulus of RB-SiC prepared by DLP are not sufficient, due to its low solid content (around 40 vol.%), compared with the traditi...

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Detalles Bibliográficos
Autores principales:	Li, Wei, Zhang, Ge, Cui, Congcong, Bao, Jianxun, Guo, Conghui, Xu, Chuanxiang, Zhang, Wei, Zhu, Wanli
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786032/ https://www.ncbi.nlm.nih.gov/pubmed/36556526 http://dx.doi.org/10.3390/ma15248721

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