Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors

Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed in the nanoscale channel of silicon transistors, were analyzed both experimentally and theoretically. Single electron transistors (SET) made in a SOI-FET configuration using silicon quantum dot as well as pho...

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Detalles Bibliográficos
Autores principales: Yadav, Pooja, Chakraborty, Soumya, Moraru, Daniel, Samanta, Arup
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786079/
https://www.ncbi.nlm.nih.gov/pubmed/36558290
http://dx.doi.org/10.3390/nano12244437

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786079/
https://www.ncbi.nlm.nih.gov/pubmed/36558290
http://dx.doi.org/10.3390/nano12244437

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