Cargando…
Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors
Current–voltage characteristics of a quantum dot in double-barrier configuration, as formed in the nanoscale channel of silicon transistors, were analyzed both experimentally and theoretically. Single electron transistors (SET) made in a SOI-FET configuration using silicon quantum dot as well as pho...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786079/ https://www.ncbi.nlm.nih.gov/pubmed/36558290 http://dx.doi.org/10.3390/nano12244437 |