Non-Volatile Memory and Synaptic Characteristics of TiN/CeO(x)/Pt RRAM Devices

In this study, we investigate the synaptic characteristics and the non-volatile memory characteristics of TiN/CeO(x)/Pt RRAM devices for a neuromorphic system. The thickness and chemical properties of the CeO(x) are confirmed through TEM, EDS, and XPS analysis. A lot of oxygen vacancies (ions) in CeO(x) film enhance resistive switching. The stable bipolar resistive switching characteristics, endurance cycling (>100 cycles), and non-volatile properties in the retention test (>10,000 s) are assessed through DC sweep. The filamentary switching model and Schottky emission-based conduction model are presented for TiN/CeO(x)/Pt RRAM devices in the LRS and HRS. The compliance current (1~5 mA) and reset stop voltage (−1.3~−2.2 V) are used in the set and reset processes, respectively, to implement multi-level cell (MLC) in DC sweep mode. Based on neural activity, a neuromorphic system is performed by electrical stimulation. Accordingly, the pulse responses achieve longer endurance cycling (>10,000 cycles), MLC (potentiation and depression), spike-timing dependent plasticity (STDP), and excitatory postsynaptic current (EPSC) to mimic synapse using TiN/CeO(x)/Pt RRAM devices.