Non-Volatile Memory and Synaptic Characteristics of TiN/CeO(x)/Pt RRAM Devices

In this study, we investigate the synaptic characteristics and the non-volatile memory characteristics of TiN/CeO(x)/Pt RRAM devices for a neuromorphic system. The thickness and chemical properties of the CeO(x) are confirmed through TEM, EDS, and XPS analysis. A lot of oxygen vacancies (ions) in Ce...

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Detalles Bibliográficos
Autores principales: Ha, Hoesung, Pyo, Juyeong, Lee, Yunseok, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786700/
https://www.ncbi.nlm.nih.gov/pubmed/36556891
http://dx.doi.org/10.3390/ma15249087

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786700/
https://www.ncbi.nlm.nih.gov/pubmed/36556891
http://dx.doi.org/10.3390/ma15249087

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