Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping

The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC(x)) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and...

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Autores principales: Chen, Guangxu, Chen, Sibin, Lin, Zewen, Huang, Rui, Guo, Yanqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786742/
https://www.ncbi.nlm.nih.gov/pubmed/36557342
http://dx.doi.org/10.3390/mi13122043
_version_ 1784858359196811264
author Chen, Guangxu
Chen, Sibin
Lin, Zewen
Huang, Rui
Guo, Yanqing
author_facet Chen, Guangxu
Chen, Sibin
Lin, Zewen
Huang, Rui
Guo, Yanqing
author_sort Chen, Guangxu
collection PubMed
description The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC(x)) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and bonding configuration of films were investigated using Raman and Fourier transform infrared absorption spectroscopies, respectively. The PL and analysis results of bonding configurations of films suggested that the enhancement of red PL is mainly caused by the reduction in nonradiative recombination centers as a result of the weak Si–Si bonds substituted by Si–N bonds.
format Online
Article
Text
id pubmed-9786742
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-97867422022-12-24 Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping Chen, Guangxu Chen, Sibin Lin, Zewen Huang, Rui Guo, Yanqing Micromachines (Basel) Article The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC(x)) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and bonding configuration of films were investigated using Raman and Fourier transform infrared absorption spectroscopies, respectively. The PL and analysis results of bonding configurations of films suggested that the enhancement of red PL is mainly caused by the reduction in nonradiative recombination centers as a result of the weak Si–Si bonds substituted by Si–N bonds. MDPI 2022-11-22 /pmc/articles/PMC9786742/ /pubmed/36557342 http://dx.doi.org/10.3390/mi13122043 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Guangxu
Chen, Sibin
Lin, Zewen
Huang, Rui
Guo, Yanqing
Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
title Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
title_full Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
title_fullStr Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
title_full_unstemmed Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
title_short Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping
title_sort enhanced red emission from amorphous silicon carbide films via nitrogen doping
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786742/
https://www.ncbi.nlm.nih.gov/pubmed/36557342
http://dx.doi.org/10.3390/mi13122043
work_keys_str_mv AT chenguangxu enhancedredemissionfromamorphoussiliconcarbidefilmsvianitrogendoping
AT chensibin enhancedredemissionfromamorphoussiliconcarbidefilmsvianitrogendoping
AT linzewen enhancedredemissionfromamorphoussiliconcarbidefilmsvianitrogendoping
AT huangrui enhancedredemissionfromamorphoussiliconcarbidefilmsvianitrogendoping
AT guoyanqing enhancedredemissionfromamorphoussiliconcarbidefilmsvianitrogendoping

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