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Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping

The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC(x)) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and...

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Detalles Bibliográficos
Autores principales:	Chen, Guangxu, Chen, Sibin, Lin, Zewen, Huang, Rui, Guo, Yanqing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786742/ https://www.ncbi.nlm.nih.gov/pubmed/36557342 http://dx.doi.org/10.3390/mi13122043

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