Remarkable Reduction in I(G) with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al(2)O(3)/SiO(2) Stack Layer AlGaN/GaN MOS-HEMT

We demonstrated the performance of an Al(2)O(3)/SiO(2) stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modul...

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Detalles Bibliográficos
Autores principales: Mazumder, Soumen, Pal, Parthasarathi, Lee, Kuan-Wei, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788628/
https://www.ncbi.nlm.nih.gov/pubmed/36556876
http://dx.doi.org/10.3390/ma15249067

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788628/
https://www.ncbi.nlm.nih.gov/pubmed/36556876
http://dx.doi.org/10.3390/ma15249067

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