Cargando…
Remarkable Reduction in I(G) with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al(2)O(3)/SiO(2) Stack Layer AlGaN/GaN MOS-HEMT
We demonstrated the performance of an Al(2)O(3)/SiO(2) stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modul...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788628/ https://www.ncbi.nlm.nih.gov/pubmed/36556876 http://dx.doi.org/10.3390/ma15249067 |