Cargando…
Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress
Flexible radio frequency (RF) transistors play an important role in the fast-growing wearable smart sensors for data communication. However, the scaling capability and high-speed performance of the flexible transistor are far below the counterparts on rigid substrates, impeding the gigahertz high-sp...
Autores principales: | Hu, Qianlan, Zhu, Shenwu, Gu, Chengru, Liu, Shiyuan, Zeng, Min, Wu, Yanqing |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788755/ https://www.ncbi.nlm.nih.gov/pubmed/36563154 http://dx.doi.org/10.1126/sciadv.ade4075 |
Ejemplares similares
-
ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells
por: Seok, Hae-Jun, et al.
Publicado: (2019) -
Flexible All-organic, All-solution Processed Thin Film Transistor Array with Ultrashort Channel
por: Xu, Wei, et al.
Publicado: (2016) -
Radio frequency transistors: principles and practical applications
por: Dye, Norm, et al.
Publicado: (1993) -
Radio frequency transistors: principles and practical applications
por: Dye, Norm, et al.
Publicado: (2001) -
Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
por: Hu, Qitao, et al.
Publicado: (2021)