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Freestanding epitaxial SrTiO(3) nanomembranes via remote epitaxy using hybrid molecular beam epitaxy

The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining freestanding epitaxial nanomembranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing...

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Detalles Bibliográficos
Autores principales: Yoon, Hyojin, Truttmann, Tristan K., Liu, Fengdeng, Matthews, Bethany E., Choo, Sooho, Su, Qun, Saraswat, Vivek, Manzo, Sebastian, Arnold, Michael S., Bowden, Mark E., Kawasaki, Jason K., Koester, Steven J., Spurgeon, Steven R., Chambers, Scott A., Jalan, Bharat
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788776/
https://www.ncbi.nlm.nih.gov/pubmed/36563139
http://dx.doi.org/10.1126/sciadv.add5328
Descripción
Sumario:The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining freestanding epitaxial nanomembranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically used in growing epitaxial oxides can damage graphene. Here, we demonstrate the successful use of hybrid molecular beam epitaxy for SrTiO(3) growth that does not require an independent oxygen source, thus avoiding graphene damage. This approach produces epitaxial films with self-regulating cation stoichiometry. Furthermore, the film (46-nm-thick SrTiO(3)) can be exfoliated and transferred to foreign substrates. These results open the door to future studies of previously unattainable freestanding oxide nanomembranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy. This approach has potentially important implications for the commercial application of perovskite oxides in flexible electronics and as a dielectric in van der Waals thin-film electronics.