Negative Tone Metallic Organic Resists with Improved Sensitivity for Plasma Etching: Implications for Silicon Nanostructure Fabrication and Photomask Production

[Image: see text] Metal–organic materials such as [NH(2)(CH(2)–CH=CH(2))(2)][Cr(7)NiF(8)(Pivalate)(16)] can act as negative tone resists for electron beam lithography (EBL) with high-resolution patterning of sub-40 nanometer pitch while exhibiting ultrahigh dry etch selectivities >100:1 and givin...

Descripción completa

Detalles Bibliográficos
Autores principales: Chaker, Ahmad, Alty, Hayden A., Winpenny, Paul, Whitehead, George F. S., Timco, Grigore A., Lewis, Scott M., Winpenny, Richard E. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9791615/
https://www.ncbi.nlm.nih.gov/pubmed/36583125
http://dx.doi.org/10.1021/acsanm.2c02986

Ejemplares similares

Ejemplares similares