Cargando…
Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films
[Image: see text] We report on the development of hybrid organic–inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films...
Autores principales: | , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9791617/ https://www.ncbi.nlm.nih.gov/pubmed/36583121 http://dx.doi.org/10.1021/acsanm.2c03639 |
_version_ | 1784859447427858432 |
---|---|
author | Jaafar, Ayoub H. Meng, Lingcong Zhang, Tongjun Guo, Dongkai Newbrook, Daniel Zhang, Wenjian Reid, Gillian de Groot, C. H. Bartlett, Philip N. Huang, Ruomeng |
author_facet | Jaafar, Ayoub H. Meng, Lingcong Zhang, Tongjun Guo, Dongkai Newbrook, Daniel Zhang, Wenjian Reid, Gillian de Groot, C. H. Bartlett, Philip N. Huang, Ruomeng |
author_sort | Jaafar, Ayoub H. |
collection | PubMed |
description | [Image: see text] We report on the development of hybrid organic–inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics. |
format | Online Article Text |
id | pubmed-9791617 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-97916172022-12-27 Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films Jaafar, Ayoub H. Meng, Lingcong Zhang, Tongjun Guo, Dongkai Newbrook, Daniel Zhang, Wenjian Reid, Gillian de Groot, C. H. Bartlett, Philip N. Huang, Ruomeng ACS Appl Nano Mater [Image: see text] We report on the development of hybrid organic–inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and rupture of conductive Ag filaments within the hybrid PMMA/GeSbTe matrix. This work provides a promising route to fabricate flexible memory devices through an electrodeposition process for application in flexible electronics. American Chemical Society 2022-11-25 2022-12-23 /pmc/articles/PMC9791617/ /pubmed/36583121 http://dx.doi.org/10.1021/acsanm.2c03639 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Jaafar, Ayoub H. Meng, Lingcong Zhang, Tongjun Guo, Dongkai Newbrook, Daniel Zhang, Wenjian Reid, Gillian de Groot, C. H. Bartlett, Philip N. Huang, Ruomeng Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films |
title | Flexible Memristor
Devices Using Hybrid Polymer/Electrodeposited
GeSbTe Nanoscale Thin Films |
title_full | Flexible Memristor
Devices Using Hybrid Polymer/Electrodeposited
GeSbTe Nanoscale Thin Films |
title_fullStr | Flexible Memristor
Devices Using Hybrid Polymer/Electrodeposited
GeSbTe Nanoscale Thin Films |
title_full_unstemmed | Flexible Memristor
Devices Using Hybrid Polymer/Electrodeposited
GeSbTe Nanoscale Thin Films |
title_short | Flexible Memristor
Devices Using Hybrid Polymer/Electrodeposited
GeSbTe Nanoscale Thin Films |
title_sort | flexible memristor
devices using hybrid polymer/electrodeposited
gesbte nanoscale thin films |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9791617/ https://www.ncbi.nlm.nih.gov/pubmed/36583121 http://dx.doi.org/10.1021/acsanm.2c03639 |
work_keys_str_mv | AT jaafarayoubh flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT menglingcong flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT zhangtongjun flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT guodongkai flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT newbrookdaniel flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT zhangwenjian flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT reidgillian flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT degrootch flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT bartlettphilipn flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms AT huangruomeng flexiblememristordevicesusinghybridpolymerelectrodepositedgesbtenanoscalethinfilms |