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Gas sensing response of ion beam irradiated Ga-doped ZnO thin films
The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag(9+) and Si(6+) irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag(9+) ion irradiated Ga...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9792471/ https://www.ncbi.nlm.nih.gov/pubmed/36572734 http://dx.doi.org/10.1038/s41598-022-26948-8 |
Sumario: | The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag(9+) and Si(6+) irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag(9+) ion irradiated Ga-doped ZnO thin was optimized at different operating temperature. It was observed that gas sensing response for both ethanol and acetone gas increases with increasing Ag(9+) ion fluence. This indicates that the swift heavy ions have improved the sensitivity of Ga-doled ZnO thin film by reducing the particle size. The Si(6+) ion irradiated Ga-doped ZnO thin films were also exposed to ethanol and acetone gas for gas sensing applications. In comparison to Ag(9+) ion irradiated thin film, the film irradiated with Si(6+) ion beam exhibits a greater sensing response to both ethanol and acetone gas. |
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