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Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector
[Image: see text] Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light–mass interactio...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9798488/ https://www.ncbi.nlm.nih.gov/pubmed/36591144 http://dx.doi.org/10.1021/acsomega.2c06480 |
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author | Liu, Xinke Wang, Jiangchuan Lin, Yuheng Zhou, Jie Liu, Qiang Yu, Wenjie Cai, Yongqing Li, Xiaohua Botcha, V. Divakar Rao, Tingke Huang, Shuangwu |
author_facet | Liu, Xinke Wang, Jiangchuan Lin, Yuheng Zhou, Jie Liu, Qiang Yu, Wenjie Cai, Yongqing Li, Xiaohua Botcha, V. Divakar Rao, Tingke Huang, Shuangwu |
author_sort | Liu, Xinke |
collection | PubMed |
description | [Image: see text] Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light–mass interaction. Currently, graphene and transition-metal dichalcogenides (TMDCs) are the most attractive active materials for constructing photodetectors. A growing number of emerging TMDCs applied in photodetectors bring up opportunities in the direct band gap independence with thickness. This study demonstrated for the first time a photodetector based on a few-layer Re(x)Mo(1–x)S(2), which was grown by chemical vapor deposition (CVD) under atmospheric pressure. The detailed material characterizations were performed using Raman spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy (XPS) on an as-grown few-layer Re(x)Mo(1–x)S(2). The results show that both MoS(2) and ReS(2) peaks appear in the Re(x)Mo(1–x)S(2) Raman diagram. Re(x)Mo(1–x)S(2) is observed to emit light at a wavelength of 716.8 nm. The electronic band structure of the few layers of Re(x)Mo(1–x)S(2) calculated using the first-principles theory suggests that the band gap of Re(x)Mo(1–x)S(2) is larger than that of ReS(2) and smaller than that of MoS(2), which is consistent with the photoluminescence results. The thermal stability of the few layers of Re(x)Mo(1–x)S(2) was evaluated using Raman temperature measurements. It is found that the thermal stability of Re(x)Mo(1–x)S(2) is close to those of pure ReS(2) and MoS(2). The fabricated Re(x)Mo(1–x)S(2) photodetector shows a high response rate of 7.46 A W(–1) under 365 nm illumination, offering a competitive performance to the devices based on TMDCs and graphenes. This study unambiguously distinguishes Re(x)Mo(1–x)S(2) as a future candidate in electronics and optoelectronics. |
format | Online Article Text |
id | pubmed-9798488 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-97984882022-12-30 Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector Liu, Xinke Wang, Jiangchuan Lin, Yuheng Zhou, Jie Liu, Qiang Yu, Wenjie Cai, Yongqing Li, Xiaohua Botcha, V. Divakar Rao, Tingke Huang, Shuangwu ACS Omega [Image: see text] Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light–mass interaction. Currently, graphene and transition-metal dichalcogenides (TMDCs) are the most attractive active materials for constructing photodetectors. A growing number of emerging TMDCs applied in photodetectors bring up opportunities in the direct band gap independence with thickness. This study demonstrated for the first time a photodetector based on a few-layer Re(x)Mo(1–x)S(2), which was grown by chemical vapor deposition (CVD) under atmospheric pressure. The detailed material characterizations were performed using Raman spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy (XPS) on an as-grown few-layer Re(x)Mo(1–x)S(2). The results show that both MoS(2) and ReS(2) peaks appear in the Re(x)Mo(1–x)S(2) Raman diagram. Re(x)Mo(1–x)S(2) is observed to emit light at a wavelength of 716.8 nm. The electronic band structure of the few layers of Re(x)Mo(1–x)S(2) calculated using the first-principles theory suggests that the band gap of Re(x)Mo(1–x)S(2) is larger than that of ReS(2) and smaller than that of MoS(2), which is consistent with the photoluminescence results. The thermal stability of the few layers of Re(x)Mo(1–x)S(2) was evaluated using Raman temperature measurements. It is found that the thermal stability of Re(x)Mo(1–x)S(2) is close to those of pure ReS(2) and MoS(2). The fabricated Re(x)Mo(1–x)S(2) photodetector shows a high response rate of 7.46 A W(–1) under 365 nm illumination, offering a competitive performance to the devices based on TMDCs and graphenes. This study unambiguously distinguishes Re(x)Mo(1–x)S(2) as a future candidate in electronics and optoelectronics. American Chemical Society 2022-12-13 /pmc/articles/PMC9798488/ /pubmed/36591144 http://dx.doi.org/10.1021/acsomega.2c06480 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Liu, Xinke Wang, Jiangchuan Lin, Yuheng Zhou, Jie Liu, Qiang Yu, Wenjie Cai, Yongqing Li, Xiaohua Botcha, V. Divakar Rao, Tingke Huang, Shuangwu Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector |
title | Synthesis of Rhenium-Doped
Molybdenum Sulfide by Atmospheric
Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector |
title_full | Synthesis of Rhenium-Doped
Molybdenum Sulfide by Atmospheric
Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector |
title_fullStr | Synthesis of Rhenium-Doped
Molybdenum Sulfide by Atmospheric
Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector |
title_full_unstemmed | Synthesis of Rhenium-Doped
Molybdenum Sulfide by Atmospheric
Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector |
title_short | Synthesis of Rhenium-Doped
Molybdenum Sulfide by Atmospheric
Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector |
title_sort | synthesis of rhenium-doped
molybdenum sulfide by atmospheric
pressure chemical vapor deposition (cvd) for a high-performance photodetector |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9798488/ https://www.ncbi.nlm.nih.gov/pubmed/36591144 http://dx.doi.org/10.1021/acsomega.2c06480 |
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