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Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

[Image: see text] As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of...

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Autores principales: Hasani, Amirhossein, Mohammadzadeh, Mohammad Reza, Ghanbari, Hamidreza, Fawzy, Mirette, Silva, Thushani De, Abnavi, Amin, Ahmadi, Ribwar, Askar, Abdelrahman M., Kabir, Fahmid, Rajapakse, R. K. N. D., Adachi, Michael M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9798498/
https://www.ncbi.nlm.nih.gov/pubmed/36591213
http://dx.doi.org/10.1021/acsomega.2c06589
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author Hasani, Amirhossein
Mohammadzadeh, Mohammad Reza
Ghanbari, Hamidreza
Fawzy, Mirette
Silva, Thushani De
Abnavi, Amin
Ahmadi, Ribwar
Askar, Abdelrahman M.
Kabir, Fahmid
Rajapakse, R. K. N. D.
Adachi, Michael M.
author_facet Hasani, Amirhossein
Mohammadzadeh, Mohammad Reza
Ghanbari, Hamidreza
Fawzy, Mirette
Silva, Thushani De
Abnavi, Amin
Ahmadi, Ribwar
Askar, Abdelrahman M.
Kabir, Fahmid
Rajapakse, R. K. N. D.
Adachi, Michael M.
author_sort Hasani, Amirhossein
collection PubMed
description [Image: see text] As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV–vis–NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I(on)/I(off)) of ∼10(6), fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.
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spelling pubmed-97984982022-12-30 Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction Hasani, Amirhossein Mohammadzadeh, Mohammad Reza Ghanbari, Hamidreza Fawzy, Mirette Silva, Thushani De Abnavi, Amin Ahmadi, Ribwar Askar, Abdelrahman M. Kabir, Fahmid Rajapakse, R. K. N. D. Adachi, Michael M. ACS Omega [Image: see text] As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV–vis–NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I(on)/I(off)) of ∼10(6), fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications. American Chemical Society 2022-12-13 /pmc/articles/PMC9798498/ /pubmed/36591213 http://dx.doi.org/10.1021/acsomega.2c06589 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Hasani, Amirhossein
Mohammadzadeh, Mohammad Reza
Ghanbari, Hamidreza
Fawzy, Mirette
Silva, Thushani De
Abnavi, Amin
Ahmadi, Ribwar
Askar, Abdelrahman M.
Kabir, Fahmid
Rajapakse, R. K. N. D.
Adachi, Michael M.
Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
title Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
title_full Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
title_fullStr Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
title_full_unstemmed Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
title_short Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
title_sort self-powered, broadband photodetector based on two-dimensional tellurium-silicon heterojunction
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9798498/
https://www.ncbi.nlm.nih.gov/pubmed/36591213
http://dx.doi.org/10.1021/acsomega.2c06589
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