Ultra‐Thin SnO(x) Buffer Layer Enables High‐Efficiency Quantum Junction Photovoltaics

Solution‐processed solar cells are promising for the cost‐effective, high‐throughput production of photovoltaic devices. Colloidal quantum dots (CQDs) are attractive candidate materials for efficient, solution‐processed solar cells, potentially realizing the broad‐spectrum light utilization and multi‐exciton generation effect for the future efficiency breakthrough of solar cells. The emerging quantum junction solar cells (QJSCs), constructed by n‐ and p‐type CQDs only, open novel avenue for all‐quantum‐dot photovoltaics with a simplified device configuration and convenient processing technology. However, the development of high‐efficiency QJSCs still faces the challenge of back carrier diffusion induced by the huge carrier density drop at the interface of CQDs and conductive glass substrate. Herein, an ultra‐thin atomic layer deposited tin oxide (SnO(x)) layer is employed to buffer this carrier density drop, significantly reducing the interfacial recombination and capacitance caused by the back carrier diffusion. The SnO(x)‐modified QJSC achieves a record‐high efficiency of 11.55% and a suppressed hysteresis factor of 0.04 in contrast with reference QJSC with an efficiency of 10.4% and hysteresis factor of 0.48. This work clarifies the critical effect of interfacial issues on the carrier recombination and hysteresis of QJSCs, and provides an effective pathway to design high‐performance all‐quantum‐dot devices.