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Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected am...

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Autores principales: Lee, Minjong, Kim, Tae Wook, Park, Chang Yong, Lee, Kimoon, Taniguchi, Takashi, Watanabe, Kenji, Kim, Min-gu, Hwang, Do Kyung, Lee, Young Tack
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9800667/
https://www.ncbi.nlm.nih.gov/pubmed/36580180
http://dx.doi.org/10.1007/s40820-022-01001-5
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author Lee, Minjong
Kim, Tae Wook
Park, Chang Yong
Lee, Kimoon
Taniguchi, Takashi
Watanabe, Kenji
Kim, Min-gu
Hwang, Do Kyung
Lee, Young Tack
author_facet Lee, Minjong
Kim, Tae Wook
Park, Chang Yong
Lee, Kimoon
Taniguchi, Takashi
Watanabe, Kenji
Kim, Min-gu
Hwang, Do Kyung
Lee, Young Tack
author_sort Lee, Minjong
collection PubMed
description Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-01001-5.
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spelling pubmed-98006672022-12-31 Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications Lee, Minjong Kim, Tae Wook Park, Chang Yong Lee, Kimoon Taniguchi, Takashi Watanabe, Kenji Kim, Min-gu Hwang, Do Kyung Lee, Young Tack Nanomicro Lett Article Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-01001-5. Springer Nature Singapore 2022-12-29 /pmc/articles/PMC9800667/ /pubmed/36580180 http://dx.doi.org/10.1007/s40820-022-01001-5 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Lee, Minjong
Kim, Tae Wook
Park, Chang Yong
Lee, Kimoon
Taniguchi, Takashi
Watanabe, Kenji
Kim, Min-gu
Hwang, Do Kyung
Lee, Young Tack
Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
title Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
title_full Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
title_fullStr Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
title_full_unstemmed Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
title_short Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
title_sort graphene bridge heterostructure devices for negative differential transconductance circuit applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9800667/
https://www.ncbi.nlm.nih.gov/pubmed/36580180
http://dx.doi.org/10.1007/s40820-022-01001-5
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