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Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected am...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Nature Singapore
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9800667/ https://www.ncbi.nlm.nih.gov/pubmed/36580180 http://dx.doi.org/10.1007/s40820-022-01001-5 |
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author | Lee, Minjong Kim, Tae Wook Park, Chang Yong Lee, Kimoon Taniguchi, Takashi Watanabe, Kenji Kim, Min-gu Hwang, Do Kyung Lee, Young Tack |
author_facet | Lee, Minjong Kim, Tae Wook Park, Chang Yong Lee, Kimoon Taniguchi, Takashi Watanabe, Kenji Kim, Min-gu Hwang, Do Kyung Lee, Young Tack |
author_sort | Lee, Minjong |
collection | PubMed |
description | Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-01001-5. |
format | Online Article Text |
id | pubmed-9800667 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Springer Nature Singapore |
record_format | MEDLINE/PubMed |
spelling | pubmed-98006672022-12-31 Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications Lee, Minjong Kim, Tae Wook Park, Chang Yong Lee, Kimoon Taniguchi, Takashi Watanabe, Kenji Kim, Min-gu Hwang, Do Kyung Lee, Young Tack Nanomicro Lett Article Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics. [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s40820-022-01001-5. Springer Nature Singapore 2022-12-29 /pmc/articles/PMC9800667/ /pubmed/36580180 http://dx.doi.org/10.1007/s40820-022-01001-5 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Lee, Minjong Kim, Tae Wook Park, Chang Yong Lee, Kimoon Taniguchi, Takashi Watanabe, Kenji Kim, Min-gu Hwang, Do Kyung Lee, Young Tack Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications |
title | Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications |
title_full | Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications |
title_fullStr | Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications |
title_full_unstemmed | Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications |
title_short | Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications |
title_sort | graphene bridge heterostructure devices for negative differential transconductance circuit applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9800667/ https://www.ncbi.nlm.nih.gov/pubmed/36580180 http://dx.doi.org/10.1007/s40820-022-01001-5 |
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