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Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering
Hydrogenation is an effective approach to improve the performance of photocatalysts within defect engineering methods. The mechanism of hydrogenation and synergetic effects between hydrogen atoms and local electronic structures, however, remain unclear due to the limits of available photocatalytic s...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9814713/ https://www.ncbi.nlm.nih.gov/pubmed/36703473 http://dx.doi.org/10.1038/s42004-020-0319-9 |
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author | Cui, Dandan Xu, Kang Dong, Xingan Lv, Dongdong Dong, Fan Hao, Weichang Du, Yi Chen, Jun |
author_facet | Cui, Dandan Xu, Kang Dong, Xingan Lv, Dongdong Dong, Fan Hao, Weichang Du, Yi Chen, Jun |
author_sort | Cui, Dandan |
collection | PubMed |
description | Hydrogenation is an effective approach to improve the performance of photocatalysts within defect engineering methods. The mechanism of hydrogenation and synergetic effects between hydrogen atoms and local electronic structures, however, remain unclear due to the limits of available photocatalytic systems and technical barriers to observation and measurement. Here, we utilize oxygen vacancies as residential sites to host hydrogen atoms in a layered bismuth oxychloride material containing defects. It is confirmed theoretically and experimentally that the hydrogen atoms interact with the vacancies and surrounding atoms, which promotes the separati30on and transfer processes of photo-generated carriers via the resulting band structure. The efficiency of catalytic activity and selectivity of defective bismuth oxychloride regarding nitric oxide oxidation has been improved. This work clearly reveals the role of hydrogen atoms in defective crystalline materials and provides a promising way to design catalytic materials with controllable defect engineering. |
format | Online Article Text |
id | pubmed-9814713 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-98147132023-01-10 Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering Cui, Dandan Xu, Kang Dong, Xingan Lv, Dongdong Dong, Fan Hao, Weichang Du, Yi Chen, Jun Commun Chem Article Hydrogenation is an effective approach to improve the performance of photocatalysts within defect engineering methods. The mechanism of hydrogenation and synergetic effects between hydrogen atoms and local electronic structures, however, remain unclear due to the limits of available photocatalytic systems and technical barriers to observation and measurement. Here, we utilize oxygen vacancies as residential sites to host hydrogen atoms in a layered bismuth oxychloride material containing defects. It is confirmed theoretically and experimentally that the hydrogen atoms interact with the vacancies and surrounding atoms, which promotes the separati30on and transfer processes of photo-generated carriers via the resulting band structure. The efficiency of catalytic activity and selectivity of defective bismuth oxychloride regarding nitric oxide oxidation has been improved. This work clearly reveals the role of hydrogen atoms in defective crystalline materials and provides a promising way to design catalytic materials with controllable defect engineering. Nature Publishing Group UK 2020-06-05 /pmc/articles/PMC9814713/ /pubmed/36703473 http://dx.doi.org/10.1038/s42004-020-0319-9 Text en © The Author(s) 2020 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Cui, Dandan Xu, Kang Dong, Xingan Lv, Dongdong Dong, Fan Hao, Weichang Du, Yi Chen, Jun Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
title | Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
title_full | Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
title_fullStr | Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
title_full_unstemmed | Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
title_short | Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
title_sort | controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9814713/ https://www.ncbi.nlm.nih.gov/pubmed/36703473 http://dx.doi.org/10.1038/s42004-020-0319-9 |
work_keys_str_mv | AT cuidandan controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT xukang controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT dongxingan controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT lvdongdong controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT dongfan controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT haoweichang controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT duyi controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering AT chenjun controlledhydrogenationintodefectiveinterlayerbismuthoxychlorideviavacancyengineering |