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Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures

Earth-abundant antimony trisulfide (Sb(2)S(3)), or simply antimonite, is a promising material for capturing natural energies like solar power and heat flux. The layered structure, held up by weak van-der Waals forces, induces anisotropic behaviors in carrier transportation and thermal expansion. Her...

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Autores principales: Cui, Zhongxun, Bu, Kejun, Zhuang, Yukai, Donnelly, Mary-Ellen, Zhang, Dongzhou, Dalladay-Simpson, Philip, Howie, Ross T., Zhang, Jiandong, Lü, Xujie, Hu, Qingyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9814834/
https://www.ncbi.nlm.nih.gov/pubmed/36697645
http://dx.doi.org/10.1038/s42004-021-00565-4
_version_ 1784864225965899776
author Cui, Zhongxun
Bu, Kejun
Zhuang, Yukai
Donnelly, Mary-Ellen
Zhang, Dongzhou
Dalladay-Simpson, Philip
Howie, Ross T.
Zhang, Jiandong
Lü, Xujie
Hu, Qingyang
author_facet Cui, Zhongxun
Bu, Kejun
Zhuang, Yukai
Donnelly, Mary-Ellen
Zhang, Dongzhou
Dalladay-Simpson, Philip
Howie, Ross T.
Zhang, Jiandong
Lü, Xujie
Hu, Qingyang
author_sort Cui, Zhongxun
collection PubMed
description Earth-abundant antimony trisulfide (Sb(2)S(3)), or simply antimonite, is a promising material for capturing natural energies like solar power and heat flux. The layered structure, held up by weak van-der Waals forces, induces anisotropic behaviors in carrier transportation and thermal expansion. Here, we used stress as mechanical stimuli to destabilize the layered structure and observed the structural phase transition to a three-dimensional (3D) structure. We combined in situ x-ray diffraction (XRD), Raman spectroscopy, ultraviolet-visible spectroscopy, and first-principles calculations to study the evolution of structure and bandgap width up to 20.1 GPa. The optical band gap energy of Sb(2)S(3) followed a two-step hierarchical sequence at approximately 4 and 11 GPa. We also revealed that the first step of change is mainly caused by the redistribution of band states near the conduction band maximum. The second transition is controlled by an isostructural phase transition, with collapsed layers and the formation of a higher coordinated bulky structure. The band gap reduced from 1.73 eV at ambient to 0.68 eV at 15 GPa, making it a promising thermoelectric material under high pressure.
format Online
Article
Text
id pubmed-9814834
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-98148342023-01-10 Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures Cui, Zhongxun Bu, Kejun Zhuang, Yukai Donnelly, Mary-Ellen Zhang, Dongzhou Dalladay-Simpson, Philip Howie, Ross T. Zhang, Jiandong Lü, Xujie Hu, Qingyang Commun Chem Article Earth-abundant antimony trisulfide (Sb(2)S(3)), or simply antimonite, is a promising material for capturing natural energies like solar power and heat flux. The layered structure, held up by weak van-der Waals forces, induces anisotropic behaviors in carrier transportation and thermal expansion. Here, we used stress as mechanical stimuli to destabilize the layered structure and observed the structural phase transition to a three-dimensional (3D) structure. We combined in situ x-ray diffraction (XRD), Raman spectroscopy, ultraviolet-visible spectroscopy, and first-principles calculations to study the evolution of structure and bandgap width up to 20.1 GPa. The optical band gap energy of Sb(2)S(3) followed a two-step hierarchical sequence at approximately 4 and 11 GPa. We also revealed that the first step of change is mainly caused by the redistribution of band states near the conduction band maximum. The second transition is controlled by an isostructural phase transition, with collapsed layers and the formation of a higher coordinated bulky structure. The band gap reduced from 1.73 eV at ambient to 0.68 eV at 15 GPa, making it a promising thermoelectric material under high pressure. Nature Publishing Group UK 2021-09-02 /pmc/articles/PMC9814834/ /pubmed/36697645 http://dx.doi.org/10.1038/s42004-021-00565-4 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Cui, Zhongxun
Bu, Kejun
Zhuang, Yukai
Donnelly, Mary-Ellen
Zhang, Dongzhou
Dalladay-Simpson, Philip
Howie, Ross T.
Zhang, Jiandong
Lü, Xujie
Hu, Qingyang
Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures
title Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures
title_full Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures
title_fullStr Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures
title_full_unstemmed Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures
title_short Phase transition mechanism and bandgap engineering of Sb(2)S(3) at gigapascal pressures
title_sort phase transition mechanism and bandgap engineering of sb(2)s(3) at gigapascal pressures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9814834/
https://www.ncbi.nlm.nih.gov/pubmed/36697645
http://dx.doi.org/10.1038/s42004-021-00565-4
work_keys_str_mv AT cuizhongxun phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT bukejun phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT zhuangyukai phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT donnellymaryellen phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT zhangdongzhou phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT dalladaysimpsonphilip phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT howierosst phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT zhangjiandong phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT luxujie phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures
AT huqingyang phasetransitionmechanismandbandgapengineeringofsb2s3atgigapascalpressures