Silver-Decorated Silicon Nanostructures: Fabrication and Characterization of Nanoscale Terraces as an Efficient SERS-Active Substrate

Rich and highly dense surface-enhanced Raman (SERS) hotspots available in the SERS-active platform are highly anticipated in SERS measurements. In this work, conventional silicon wafer was treated to have wide exposure to terraces available within the silicon nanostructures (Si-NSs). High-resolution field emission scanning electron microscopic (FESEM) investigations confirmed that the terraces were several microns wide and spread over different steps. These terraces were further decorated with silver nanoparticles (Ag-NPs) of different shapes and sizes to achieve SERS-active hotspots. Based on more than 150 events, a histogram of the size distribution of Ag-NPs indicated a relatively narrow size distribution, 29.64 ± 4.66 nm. The coverage density was estimated to be ~4 × 10(10) cm(−2). The SERS-activity of Ag-NPs -decorated Si-NSs was found to be enhanced with reference to those obtained in pristine Si-NSs. Finite difference time domain models were developed to support experimental observations in view of electromagnetic (EM) near-field distributions. Three archetype models; (i) dimer of same constituent Ag-NPs, (ii) dimer of different constituent Ag-NPs, and (iii) linear trimer of different constituent Ag-NPs were developed. EM near-field distributions were extracted at different incident polarizations. Si-NSs are well-known to facilitate light confinement, and such confinement can be cascaded within different Ag-NPs-decorated terraces of Si-NSs.