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The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis
Gallium nitride (GaN) has a wide energy band gap and a high power density, efficiency, switching frequency, and electron carrier mobility, having broad applications in digitization. Because GaN has high potentials, this study performed a bibliometric analysis on the publications of GaN indexed in th...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822161/ https://www.ncbi.nlm.nih.gov/pubmed/36614740 http://dx.doi.org/10.3390/ma16010401 |