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Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser

Silicon carbide (SiC) has a variety of applications because of its favorable chemical stability and outstanding physical characteristics, such as high hardness and high rigidity. In this study, a femtosecond laser with a spiral scanning radial offset of 5 μm and a spot radius of 6 μm is utilized to...

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Autores principales: Zhang, Xifang, Hou, Zhibao, Song, Jiacheng, Jin, Zhiyi, Yao, Zhenqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822181/
https://www.ncbi.nlm.nih.gov/pubmed/36614584
http://dx.doi.org/10.3390/ma16010244
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author Zhang, Xifang
Hou, Zhibao
Song, Jiacheng
Jin, Zhiyi
Yao, Zhenqiang
author_facet Zhang, Xifang
Hou, Zhibao
Song, Jiacheng
Jin, Zhiyi
Yao, Zhenqiang
author_sort Zhang, Xifang
collection PubMed
description Silicon carbide (SiC) has a variety of applications because of its favorable chemical stability and outstanding physical characteristics, such as high hardness and high rigidity. In this study, a femtosecond laser with a spiral scanning radial offset of 5 μm and a spot radius of 6 μm is utilized to process micropillars on a SiC plate. The influence of pulsed laser beam energies and laser translation velocities on the micropillar profiles, dimensions, surface roughness Ra, and material removal capability (MRC) of micropillars was investigated. The processing results indicate that the micropillar has the best perpendicularity, with a micropillar bottom angle of 75.59° under a pulsed beam energy of 50 μJ in the range of 10–70 μJ, with a pulsed repetition rate of 600 kHz and a translation velocity of 0.1 m/s. As the laser translation velocity increases between 0.2 m/s and 1.0 m/s under a fixed pulsed beam energy of 50 μJ and a constant pulsed repetition rate of 600 kHz, the micropillar height decreases from 119.88 μm to 81.79 μm, with the MRC value increasing from 1.998 μm(3)/μJ to 6.816 μm(3)/μJ, while the micropillar bottom angle increases from 68.87° to 75.59°, and the Ra value diminishes from 0.836 μm to 0.341 μm. It is suggested that a combination of a higher pulsed laser beam energy with a faster laser translation speed is recommended to achieve micropillars with the same height, as well as an improved processing efficiency and surface finish.
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spelling pubmed-98221812023-01-07 Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser Zhang, Xifang Hou, Zhibao Song, Jiacheng Jin, Zhiyi Yao, Zhenqiang Materials (Basel) Article Silicon carbide (SiC) has a variety of applications because of its favorable chemical stability and outstanding physical characteristics, such as high hardness and high rigidity. In this study, a femtosecond laser with a spiral scanning radial offset of 5 μm and a spot radius of 6 μm is utilized to process micropillars on a SiC plate. The influence of pulsed laser beam energies and laser translation velocities on the micropillar profiles, dimensions, surface roughness Ra, and material removal capability (MRC) of micropillars was investigated. The processing results indicate that the micropillar has the best perpendicularity, with a micropillar bottom angle of 75.59° under a pulsed beam energy of 50 μJ in the range of 10–70 μJ, with a pulsed repetition rate of 600 kHz and a translation velocity of 0.1 m/s. As the laser translation velocity increases between 0.2 m/s and 1.0 m/s under a fixed pulsed beam energy of 50 μJ and a constant pulsed repetition rate of 600 kHz, the micropillar height decreases from 119.88 μm to 81.79 μm, with the MRC value increasing from 1.998 μm(3)/μJ to 6.816 μm(3)/μJ, while the micropillar bottom angle increases from 68.87° to 75.59°, and the Ra value diminishes from 0.836 μm to 0.341 μm. It is suggested that a combination of a higher pulsed laser beam energy with a faster laser translation speed is recommended to achieve micropillars with the same height, as well as an improved processing efficiency and surface finish. MDPI 2022-12-27 /pmc/articles/PMC9822181/ /pubmed/36614584 http://dx.doi.org/10.3390/ma16010244 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Xifang
Hou, Zhibao
Song, Jiacheng
Jin, Zhiyi
Yao, Zhenqiang
Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser
title Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser
title_full Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser
title_fullStr Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser
title_full_unstemmed Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser
title_short Material Removal Capability and Profile Quality Assessment on Silicon Carbide Micropillar Fabrication with a Femtosecond Laser
title_sort material removal capability and profile quality assessment on silicon carbide micropillar fabrication with a femtosecond laser
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822181/
https://www.ncbi.nlm.nih.gov/pubmed/36614584
http://dx.doi.org/10.3390/ma16010244
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