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ITO Thin Films for Low-Resistance Gas Sensors

Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility...

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Autores principales: Almaev, Aleksei V., Kopyev, Viktor V., Novikov, Vadim A., Chikiryaka, Andrei V., Yakovlev, Nikita N., Usseinov, Abay B., Karipbayev, Zhakyp T., Akilbekov, Abdirash T., Koishybayeva, Zhanymgul K., Popov, Anatoli I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822304/
https://www.ncbi.nlm.nih.gov/pubmed/36614681
http://dx.doi.org/10.3390/ma16010342
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author Almaev, Aleksei V.
Kopyev, Viktor V.
Novikov, Vadim A.
Chikiryaka, Andrei V.
Yakovlev, Nikita N.
Usseinov, Abay B.
Karipbayev, Zhakyp T.
Akilbekov, Abdirash T.
Koishybayeva, Zhanymgul K.
Popov, Anatoli I.
author_facet Almaev, Aleksei V.
Kopyev, Viktor V.
Novikov, Vadim A.
Chikiryaka, Andrei V.
Yakovlev, Nikita N.
Usseinov, Abay B.
Karipbayev, Zhakyp T.
Akilbekov, Abdirash T.
Koishybayeva, Zhanymgul K.
Popov, Anatoli I.
author_sort Almaev, Aleksei V.
collection PubMed
description Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed.
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spelling pubmed-98223042023-01-07 ITO Thin Films for Low-Resistance Gas Sensors Almaev, Aleksei V. Kopyev, Viktor V. Novikov, Vadim A. Chikiryaka, Andrei V. Yakovlev, Nikita N. Usseinov, Abay B. Karipbayev, Zhakyp T. Akilbekov, Abdirash T. Koishybayeva, Zhanymgul K. Popov, Anatoli I. Materials (Basel) Article Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed. MDPI 2022-12-29 /pmc/articles/PMC9822304/ /pubmed/36614681 http://dx.doi.org/10.3390/ma16010342 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Almaev, Aleksei V.
Kopyev, Viktor V.
Novikov, Vadim A.
Chikiryaka, Andrei V.
Yakovlev, Nikita N.
Usseinov, Abay B.
Karipbayev, Zhakyp T.
Akilbekov, Abdirash T.
Koishybayeva, Zhanymgul K.
Popov, Anatoli I.
ITO Thin Films for Low-Resistance Gas Sensors
title ITO Thin Films for Low-Resistance Gas Sensors
title_full ITO Thin Films for Low-Resistance Gas Sensors
title_fullStr ITO Thin Films for Low-Resistance Gas Sensors
title_full_unstemmed ITO Thin Films for Low-Resistance Gas Sensors
title_short ITO Thin Films for Low-Resistance Gas Sensors
title_sort ito thin films for low-resistance gas sensors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822304/
https://www.ncbi.nlm.nih.gov/pubmed/36614681
http://dx.doi.org/10.3390/ma16010342
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