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Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special int...

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Detalles Bibliográficos
Autores principales:	Abramov, Alexander, Slautin, Boris, Pryakhina, Victoria, Shur, Vladimir, Kholkin, Andrei, Alikin, Denis
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9823478/ https://www.ncbi.nlm.nih.gov/pubmed/36617132 http://dx.doi.org/10.3390/s23010526

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