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Uniformity of HfO(2) Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition

In this study, we assessed the physical and chemical properties of HfO(2) thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO(2) thin film’s growth by tracing the changes in the growth rate and re...

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Detalles Bibliográficos
Autores principales:	Choi, Boyun, Kim, Hyeong-U, Jeon, Nari
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9823614/ https://www.ncbi.nlm.nih.gov/pubmed/36616071 http://dx.doi.org/10.3390/nano13010161

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