Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN(x):H Resistive Switching Memory by the Transient Current

With the big data and artificial intelligence era coming, SiN(x)-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of biological synapses. However, an effective way...

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Detalles Bibliográficos
Autores principales: Chen, Tong, Leng, Kangmin, Ma, Zhongyuan, Jiang, Xiaofan, Chen, Kunji, Li, Wei, Xu, Jun, Xu, Ling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9823840/
https://www.ncbi.nlm.nih.gov/pubmed/36615995
http://dx.doi.org/10.3390/nano13010085

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9823840/
https://www.ncbi.nlm.nih.gov/pubmed/36615995
http://dx.doi.org/10.3390/nano13010085

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