Improved Electrical Properties of EHD Jet-Patterned MoS(2) Thin-Film Transistors with Printed Ag Electrodes on a High-k Dielectric

Electrohydrodynamic (EHD) jet printing is known as a versatile method to print a wide viscosity range of materials that are impossible to print by conventional inkjet printing. Hence, with the understanding of the benefits of EHD jet printing, solution-based MoS(2) and a high-viscosity Ag paste were EHD jet-printed for electronic applications in this work. In particular, printed MoS(2) TFTs with a patterned Ag source and drain were successfully fabricated with low-k silica (SiO(2)) and high-k alumina (Al(2)O(3)) gate dielectrics, respectively. Eventually, the devices based on Al(2)O(3) exhibited much better electrical properties compared to the ones based on SiO(2). Interestingly, an improvement of around one order of magnitude in hysteresis was achieved for devices after changing the gate insulator from SiO(2) to Al(2)O(3). In effect, the results of this work for the printed MoS(2) and the printed Ag source and drains for TFTs demonstrate a new approach for jet printing in the fabrication of electronic devices.