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Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system

The importance of developing a hardmask with excellent performance, and physical and chemical properties to utilize in long-term etching is spotlighted due to the acceleration of development in high-density semiconductors. To develop such a hardmask, amorphous carbon hardmasks doped with various con...

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Autores principales: Kim, Sungtae, Jeong, Min-Woo, Kim, Kuntae, Kim, Ung-gi, Kim, Miyoung, Lee, So-Yeon, Joo, Young-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9835153/
https://www.ncbi.nlm.nih.gov/pubmed/36712610
http://dx.doi.org/10.1039/d2ra06808g
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author Kim, Sungtae
Jeong, Min-Woo
Kim, Kuntae
Kim, Ung-gi
Kim, Miyoung
Lee, So-Yeon
Joo, Young-Chang
author_facet Kim, Sungtae
Jeong, Min-Woo
Kim, Kuntae
Kim, Ung-gi
Kim, Miyoung
Lee, So-Yeon
Joo, Young-Chang
author_sort Kim, Sungtae
collection PubMed
description The importance of developing a hardmask with excellent performance, and physical and chemical properties to utilize in long-term etching is spotlighted due to the acceleration of development in high-density semiconductors. To develop such a hardmask, amorphous carbon hardmasks doped with various concentrations of N were fabricated with a DC magnetron sputtering system using varying inert gas (Ar to N(2)) ratios. In contrast to the expectation that doped nitrogen would block the permeation of fluorine and improve the etch resistance, as the nitrogen concentration increased, the selectivity of the doped amorphous carbon films decreased. To understand this degradation with increasing nitrogen concentration, systematic X-ray photoelectron spectroscopy (XPS), radial distribution function (RDF), and X-ray reflectometry (XRR) analyses were conducted. In this study, we found that as the amount of nitrogen increased, the density of the film decreased, and the amount of pyridinic and pyrrolic nitrogen bonds with low formation energy increased. In contrast, based on time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis of etched nitrogen-doped amorphous carbon films, the penetration depth of fluorine ions from the etchant decreased as the amount of nitrogen increased. Therefore, in order to develop an excellent hardmask using amorphous carbon, it is important to increase the density of the film and the nitrogen concentration in the film while lowering the ratio of pyrrolic N to pyridinic N, i.e., increasing the ratio of graphitic N.
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spelling pubmed-98351532023-01-26 Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system Kim, Sungtae Jeong, Min-Woo Kim, Kuntae Kim, Ung-gi Kim, Miyoung Lee, So-Yeon Joo, Young-Chang RSC Adv Chemistry The importance of developing a hardmask with excellent performance, and physical and chemical properties to utilize in long-term etching is spotlighted due to the acceleration of development in high-density semiconductors. To develop such a hardmask, amorphous carbon hardmasks doped with various concentrations of N were fabricated with a DC magnetron sputtering system using varying inert gas (Ar to N(2)) ratios. In contrast to the expectation that doped nitrogen would block the permeation of fluorine and improve the etch resistance, as the nitrogen concentration increased, the selectivity of the doped amorphous carbon films decreased. To understand this degradation with increasing nitrogen concentration, systematic X-ray photoelectron spectroscopy (XPS), radial distribution function (RDF), and X-ray reflectometry (XRR) analyses were conducted. In this study, we found that as the amount of nitrogen increased, the density of the film decreased, and the amount of pyridinic and pyrrolic nitrogen bonds with low formation energy increased. In contrast, based on time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis of etched nitrogen-doped amorphous carbon films, the penetration depth of fluorine ions from the etchant decreased as the amount of nitrogen increased. Therefore, in order to develop an excellent hardmask using amorphous carbon, it is important to increase the density of the film and the nitrogen concentration in the film while lowering the ratio of pyrrolic N to pyridinic N, i.e., increasing the ratio of graphitic N. The Royal Society of Chemistry 2023-01-12 /pmc/articles/PMC9835153/ /pubmed/36712610 http://dx.doi.org/10.1039/d2ra06808g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Kim, Sungtae
Jeong, Min-Woo
Kim, Kuntae
Kim, Ung-gi
Kim, Miyoung
Lee, So-Yeon
Joo, Young-Chang
Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system
title Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system
title_full Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system
title_fullStr Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system
title_full_unstemmed Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system
title_short Effect of N doping on the microstructure and dry etch properties of amorphous carbon deposited with a DC sputtering system
title_sort effect of n doping on the microstructure and dry etch properties of amorphous carbon deposited with a dc sputtering system
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9835153/
https://www.ncbi.nlm.nih.gov/pubmed/36712610
http://dx.doi.org/10.1039/d2ra06808g
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