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Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)

Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co‐workers develop a tip‐enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which c...

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Detalles Bibliográficos
Autores principales: Huang, Dezhao, Sun, Qiangsheng, Liu, Zeyu, Xu, Shen, Yang, Ronggui, Yue, Yanan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839835/
http://dx.doi.org/10.1002/advs.202370010
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author Huang, Dezhao
Sun, Qiangsheng
Liu, Zeyu
Xu, Shen
Yang, Ronggui
Yue, Yanan
author_facet Huang, Dezhao
Sun, Qiangsheng
Liu, Zeyu
Xu, Shen
Yang, Ronggui
Yue, Yanan
author_sort Huang, Dezhao
collection PubMed
description Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co‐workers develop a tip‐enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which can find wide application in the thermal management of GaN‐based electronics. [Image: see text]
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spelling pubmed-98398352023-01-18 Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) Huang, Dezhao Sun, Qiangsheng Liu, Zeyu Xu, Shen Yang, Ronggui Yue, Yanan Adv Sci (Weinh) Back Cover Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co‐workers develop a tip‐enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which can find wide application in the thermal management of GaN‐based electronics. [Image: see text] John Wiley and Sons Inc. 2023-01-13 /pmc/articles/PMC9839835/ http://dx.doi.org/10.1002/advs.202370010 Text en © 2023 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Back Cover
Huang, Dezhao
Sun, Qiangsheng
Liu, Zeyu
Xu, Shen
Yang, Ronggui
Yue, Yanan
Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
title Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
title_full Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
title_fullStr Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
title_full_unstemmed Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
title_short Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
title_sort ballistic thermal transport at sub‐10 nm laser‐induced hot spots in gan crystal (adv. sci. 2/2023)
topic Back Cover
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839835/
http://dx.doi.org/10.1002/advs.202370010
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AT xushen ballisticthermaltransportatsub10nmlaserinducedhotspotsingancrystaladvsci22023
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