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Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023)
Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co‐workers develop a tip‐enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which c...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839835/ http://dx.doi.org/10.1002/advs.202370010 |
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author | Huang, Dezhao Sun, Qiangsheng Liu, Zeyu Xu, Shen Yang, Ronggui Yue, Yanan |
author_facet | Huang, Dezhao Sun, Qiangsheng Liu, Zeyu Xu, Shen Yang, Ronggui Yue, Yanan |
author_sort | Huang, Dezhao |
collection | PubMed |
description | Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co‐workers develop a tip‐enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which can find wide application in the thermal management of GaN‐based electronics. [Image: see text] |
format | Online Article Text |
id | pubmed-9839835 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-98398352023-01-18 Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) Huang, Dezhao Sun, Qiangsheng Liu, Zeyu Xu, Shen Yang, Ronggui Yue, Yanan Adv Sci (Weinh) Back Cover Ballistic Thermal Transport In this article number 2204777, Yanan Yue and co‐workers develop a tip‐enhanced Raman thermometry to study ballistic thermal transport within 10 nm in GaN, simultaneously achieving local laser heating and temperature probing. The phonon mean free path is predicted which can find wide application in the thermal management of GaN‐based electronics. [Image: see text] John Wiley and Sons Inc. 2023-01-13 /pmc/articles/PMC9839835/ http://dx.doi.org/10.1002/advs.202370010 Text en © 2023 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes. |
spellingShingle | Back Cover Huang, Dezhao Sun, Qiangsheng Liu, Zeyu Xu, Shen Yang, Ronggui Yue, Yanan Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) |
title | Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) |
title_full | Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) |
title_fullStr | Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) |
title_full_unstemmed | Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) |
title_short | Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal (Adv. Sci. 2/2023) |
title_sort | ballistic thermal transport at sub‐10 nm laser‐induced hot spots in gan crystal (adv. sci. 2/2023) |
topic | Back Cover |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839835/ http://dx.doi.org/10.1002/advs.202370010 |
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