Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal

Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a Gallium nitride (GaN) device when its characteristic length reaches the nanometer scale. In this work, the authors develop a tip‐enhanced Raman thermometry approach to study ballistic thermal transport within...

Descripción completa

Detalles Bibliográficos
Autores principales: Huang, Dezhao, Sun, Qiangsheng, Liu, Zeyu, Xu, Shen, Yang, Ronggui, Yue, Yanan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839872/
https://www.ncbi.nlm.nih.gov/pubmed/36394164
http://dx.doi.org/10.1002/advs.202204777

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839872/
https://www.ncbi.nlm.nih.gov/pubmed/36394164
http://dx.doi.org/10.1002/advs.202204777

Ejemplares similares