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Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal

Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a Gallium nitride (GaN) device when its characteristic length reaches the nanometer scale. In this work, the authors develop a tip‐enhanced Raman thermometry approach to study ballistic thermal transport within...

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Detalles Bibliográficos
Autores principales:	Huang, Dezhao, Sun, Qiangsheng, Liu, Zeyu, Xu, Shen, Yang, Ronggui, Yue, Yanan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2022
Materias:	Research Articles
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839872/ https://www.ncbi.nlm.nih.gov/pubmed/36394164 http://dx.doi.org/10.1002/advs.202204777

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