Fabrication and Characterization of In(0.53)Ga(0.47)As/InAs/In(0.53)Ga(0.47)As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

In this work, we successfully demonstrated In(0.53)Ga(0.47)As/InAs/In(0.53)Ga(0.47)As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such as V(T) = −0.13 V...

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Detalles Bibliográficos
Autores principales: Shin, Seung Heon, Shim, Jae-Phil, Jang, Hyunchul, Jang, Jae-Hyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9860809/
https://www.ncbi.nlm.nih.gov/pubmed/36677117
http://dx.doi.org/10.3390/mi14010056

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9860809/
https://www.ncbi.nlm.nih.gov/pubmed/36677117
http://dx.doi.org/10.3390/mi14010056

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