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Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band
We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in G...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9861552/ https://www.ncbi.nlm.nih.gov/pubmed/36677168 http://dx.doi.org/10.3390/mi14010108 |