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Antiferroelectrics and Magnetoresistance in La(0.5)Sr(0.5)Fe(12)O(19) Multiferroic System
The appearance of antiferroelectrics (AFE) in the ferrimagnetism (FM) system would give birth to a new type of multiferroic candidate, which is significant to the development of novel devices for energy storage. Here we demonstrate the realization of full antiferroelectrics in a magnetic La(0.5)Sr(0...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9862427/ https://www.ncbi.nlm.nih.gov/pubmed/36676231 http://dx.doi.org/10.3390/ma16020492 |
Sumario: | The appearance of antiferroelectrics (AFE) in the ferrimagnetism (FM) system would give birth to a new type of multiferroic candidate, which is significant to the development of novel devices for energy storage. Here we demonstrate the realization of full antiferroelectrics in a magnetic La(0.5)Sr(0.5)Fe(12)O(19) system (AFE+FM), which also presents a strong magnetodielectric response (MD) and magnetoresistance (MR) effect. The antiferroelectric phase was achieved at room temperature by replacing 0.5 Sr(2+) ions with 0.5 La(2+) ions in the SrFe(12)O(19) compound, whose phase transition temperature of ferroelectrics (FE) to antiferroelectrics was brought down from 174 °C to −141 °C, while the temperature of antiferroelectrics converting to paraelectrics (PE) shifts from 490 °C to 234 °C after the substitution. The fully separated double P-E hysteresis loops reveal the antiferroelectrics in La(0.5)Sr(0.5)Fe(12)O(19) ceramics. The magnitude of exerting magnetic field enables us to control the generation of spin current, which induces MD and MR effects. A 1.1T magnetic field induces a large spin current of 15.6 n A in La(0.5)Sr(0.5)Fe(12)O(19) ceramics, lifts up dielectric constants by 540%, and lowers the resistance by −89%. The magnetic performance remains as usual. The multiple functions in one single phase allow us to develop novel intelligent devices. |
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