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Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the...

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Autores principales: Dirko, Vladimir V., Lozovoy, Kirill A., Kokhanenko, Andrey P., Kukenov, Olzhas I., Korotaev, Alexander G., Voitsekhovskii, Alexander V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9862873/
https://www.ncbi.nlm.nih.gov/pubmed/36677983
http://dx.doi.org/10.3390/nano13020231
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author Dirko, Vladimir V.
Lozovoy, Kirill A.
Kokhanenko, Andrey P.
Kukenov, Olzhas I.
Korotaev, Alexander G.
Voitsekhovskii, Alexander V.
author_facet Dirko, Vladimir V.
Lozovoy, Kirill A.
Kokhanenko, Andrey P.
Kukenov, Olzhas I.
Korotaev, Alexander G.
Voitsekhovskii, Alexander V.
author_sort Dirko, Vladimir V.
collection PubMed
description This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered.
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spelling pubmed-98628732023-01-22 Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface Dirko, Vladimir V. Lozovoy, Kirill A. Kokhanenko, Andrey P. Kukenov, Olzhas I. Korotaev, Alexander G. Voitsekhovskii, Alexander V. Nanomaterials (Basel) Article This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered. MDPI 2023-01-04 /pmc/articles/PMC9862873/ /pubmed/36677983 http://dx.doi.org/10.3390/nano13020231 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Dirko, Vladimir V.
Lozovoy, Kirill A.
Kokhanenko, Andrey P.
Kukenov, Olzhas I.
Korotaev, Alexander G.
Voitsekhovskii, Alexander V.
Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
title Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
title_full Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
title_fullStr Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
title_full_unstemmed Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
title_short Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
title_sort peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9862873/
https://www.ncbi.nlm.nih.gov/pubmed/36677983
http://dx.doi.org/10.3390/nano13020231
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