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Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9862873/ https://www.ncbi.nlm.nih.gov/pubmed/36677983 http://dx.doi.org/10.3390/nano13020231 |
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author | Dirko, Vladimir V. Lozovoy, Kirill A. Kokhanenko, Andrey P. Kukenov, Olzhas I. Korotaev, Alexander G. Voitsekhovskii, Alexander V. |
author_facet | Dirko, Vladimir V. Lozovoy, Kirill A. Kokhanenko, Andrey P. Kukenov, Olzhas I. Korotaev, Alexander G. Voitsekhovskii, Alexander V. |
author_sort | Dirko, Vladimir V. |
collection | PubMed |
description | This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered. |
format | Online Article Text |
id | pubmed-9862873 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-98628732023-01-22 Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface Dirko, Vladimir V. Lozovoy, Kirill A. Kokhanenko, Andrey P. Kukenov, Olzhas I. Korotaev, Alexander G. Voitsekhovskii, Alexander V. Nanomaterials (Basel) Article This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered. MDPI 2023-01-04 /pmc/articles/PMC9862873/ /pubmed/36677983 http://dx.doi.org/10.3390/nano13020231 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Dirko, Vladimir V. Lozovoy, Kirill A. Kokhanenko, Andrey P. Kukenov, Olzhas I. Korotaev, Alexander G. Voitsekhovskii, Alexander V. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface |
title | Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface |
title_full | Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface |
title_fullStr | Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface |
title_full_unstemmed | Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface |
title_short | Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface |
title_sort | peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9862873/ https://www.ncbi.nlm.nih.gov/pubmed/36677983 http://dx.doi.org/10.3390/nano13020231 |
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