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Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the...

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Detalles Bibliográficos
Autores principales:	Dirko, Vladimir V., Lozovoy, Kirill A., Kokhanenko, Andrey P., Kukenov, Olzhas I., Korotaev, Alexander G., Voitsekhovskii, Alexander V.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9862873/ https://www.ncbi.nlm.nih.gov/pubmed/36677983 http://dx.doi.org/10.3390/nano13020231

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