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Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made [Formula: see text] a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating [Formula: see text...

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Autores principales: Shifat, A. S. M. Zadid, Stricklin, Isaac, Chityala, Ravi Kiran, Aryal, Arjun, Esteves, Giovanni, Siddiqui, Aleem, Busani, Tito
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863442/
https://www.ncbi.nlm.nih.gov/pubmed/36678027
http://dx.doi.org/10.3390/nano13020274
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author Shifat, A. S. M. Zadid
Stricklin, Isaac
Chityala, Ravi Kiran
Aryal, Arjun
Esteves, Giovanni
Siddiqui, Aleem
Busani, Tito
author_facet Shifat, A. S. M. Zadid
Stricklin, Isaac
Chityala, Ravi Kiran
Aryal, Arjun
Esteves, Giovanni
Siddiqui, Aleem
Busani, Tito
author_sort Shifat, A. S. M. Zadid
collection PubMed
description A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made [Formula: see text] a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating [Formula: see text] devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of [Formula: see text] (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices.
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spelling pubmed-98634422023-01-22 Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution Shifat, A. S. M. Zadid Stricklin, Isaac Chityala, Ravi Kiran Aryal, Arjun Esteves, Giovanni Siddiqui, Aleem Busani, Tito Nanomaterials (Basel) Article A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made [Formula: see text] a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating [Formula: see text] devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of [Formula: see text] (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices. MDPI 2023-01-09 /pmc/articles/PMC9863442/ /pubmed/36678027 http://dx.doi.org/10.3390/nano13020274 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Shifat, A. S. M. Zadid
Stricklin, Isaac
Chityala, Ravi Kiran
Aryal, Arjun
Esteves, Giovanni
Siddiqui, Aleem
Busani, Tito
Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
title Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
title_full Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
title_fullStr Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
title_full_unstemmed Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
title_short Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution
title_sort vertical etching of scandium aluminum nitride thin films using tmah solution
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863442/
https://www.ncbi.nlm.nih.gov/pubmed/36678027
http://dx.doi.org/10.3390/nano13020274
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