Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made [Formula: see text] a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating [Formula: see text...

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Detalles Bibliográficos
Autores principales: Shifat, A. S. M. Zadid, Stricklin, Isaac, Chityala, Ravi Kiran, Aryal, Arjun, Esteves, Giovanni, Siddiqui, Aleem, Busani, Tito
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863442/
https://www.ncbi.nlm.nih.gov/pubmed/36678027
http://dx.doi.org/10.3390/nano13020274

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863442/
https://www.ncbi.nlm.nih.gov/pubmed/36678027
http://dx.doi.org/10.3390/nano13020274

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