A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (V(knee)), saturation current density (I(d-sat)), and cut-off frequency (f(t)) of its high electron mobi...

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Detalles Bibliográficos
Autores principales: Guan, He, Shen, Guiyu, Liu, Shibin, Jiang, Chengyu, Wu, Jingbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863697/
https://www.ncbi.nlm.nih.gov/pubmed/36677229
http://dx.doi.org/10.3390/mi14010168

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863697/
https://www.ncbi.nlm.nih.gov/pubmed/36677229
http://dx.doi.org/10.3390/mi14010168

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