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Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection

Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emit...

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Autores principales: Wang, Weigao, Li, Yiyang, Duan, Yu, Qiu, Mingxia, An, Hua, Peng, Zhengchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863841/
https://www.ncbi.nlm.nih.gov/pubmed/36677071
http://dx.doi.org/10.3390/mi14010011
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author Wang, Weigao
Li, Yiyang
Duan, Yu
Qiu, Mingxia
An, Hua
Peng, Zhengchun
author_facet Wang, Weigao
Li, Yiyang
Duan, Yu
Qiu, Mingxia
An, Hua
Peng, Zhengchun
author_sort Wang, Weigao
collection PubMed
description Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emitting diodes (PeLEDs). In this work, a novel poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))diphenylamine)] (TFB) is applied as the hole transport layers (HTLs) to facilitate the hole injection with cascade-like energy alignment between PEDOT:PSS and methylammonium lead tribromide (MAPbBr(3)) film. Our results indicate that the introduced TFB layer did not affect the surface morphology or lead to any additional surface defects of the perovskite film. Consequently, the optimal PeLEDs with TFB HTLs show a maximum current efficiency and external quantum efficiency (EQE) of 21.26 cd A(−1) and 6.68%, respectively. Such EQE is 2.5 times higher than that of the control devices without TFB layers. This work provides a facile and robust route to optimize the device structure and improve the performance of PeLEDs.
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spelling pubmed-98638412023-01-22 Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection Wang, Weigao Li, Yiyang Duan, Yu Qiu, Mingxia An, Hua Peng, Zhengchun Micromachines (Basel) Article Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is widely used in optoelectronic devices due to its excellent hole current conductivity and suitable work function. However, imbalanced carrier injection in the PEDOT:PSS layer impedes obtaining high-performance perovskite light-emitting diodes (PeLEDs). In this work, a novel poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))diphenylamine)] (TFB) is applied as the hole transport layers (HTLs) to facilitate the hole injection with cascade-like energy alignment between PEDOT:PSS and methylammonium lead tribromide (MAPbBr(3)) film. Our results indicate that the introduced TFB layer did not affect the surface morphology or lead to any additional surface defects of the perovskite film. Consequently, the optimal PeLEDs with TFB HTLs show a maximum current efficiency and external quantum efficiency (EQE) of 21.26 cd A(−1) and 6.68%, respectively. Such EQE is 2.5 times higher than that of the control devices without TFB layers. This work provides a facile and robust route to optimize the device structure and improve the performance of PeLEDs. MDPI 2022-12-21 /pmc/articles/PMC9863841/ /pubmed/36677071 http://dx.doi.org/10.3390/mi14010011 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Weigao
Li, Yiyang
Duan, Yu
Qiu, Mingxia
An, Hua
Peng, Zhengchun
Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
title Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
title_full Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
title_fullStr Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
title_full_unstemmed Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
title_short Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection
title_sort performance enhancement of perovskite quantum dot light-emitting diodes via management of hole injection
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863841/
https://www.ncbi.nlm.nih.gov/pubmed/36677071
http://dx.doi.org/10.3390/mi14010011
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