Cargando…
Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector
The applications of silver nanowires (AgNWs) are clearly relevant to their purity and morphology. Therefore, the synthesis parameters should be precisely adjusted in order to obtain AgNWs with a high aspect ratio. Consequently, controlling the reaction time versus the reaction temperature of the AgN...
Autores principales: | , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863988/ https://www.ncbi.nlm.nih.gov/pubmed/36678106 http://dx.doi.org/10.3390/nano13020353 |
_version_ | 1784875471721201664 |
---|---|
author | Alqanoo, Anas A. M. Ahmed, Naser M. Hashim, Md. R. Almessiere, Munirah A. Taya, Sofyan A. Alsadig, Ahmed Aldaghri, Osamah A. Ibnaouf, Khalid Hassan |
author_facet | Alqanoo, Anas A. M. Ahmed, Naser M. Hashim, Md. R. Almessiere, Munirah A. Taya, Sofyan A. Alsadig, Ahmed Aldaghri, Osamah A. Ibnaouf, Khalid Hassan |
author_sort | Alqanoo, Anas A. M. |
collection | PubMed |
description | The applications of silver nanowires (AgNWs) are clearly relevant to their purity and morphology. Therefore, the synthesis parameters should be precisely adjusted in order to obtain AgNWs with a high aspect ratio. Consequently, controlling the reaction time versus the reaction temperature of the AgNWs is crucial to synthesize AgNWs with a high crystallinity and is important in fabricating optoelectronic devices. In this work, we tracked the morphological alterations of AgNWs during the growth process in order to determine the optimal reaction time and temperature. Thus, here, the UV–Vis absorption spectra were used to investigate how the reaction time varies with the temperature. The reaction was conducted at five different temperatures, 140–180 °C. As a result, an equation was developed to describe the relationship between them and to calculate the reaction time at any given reaction temperature. It was observed that the average diameter of the NWs was temperature-dependent and had a minimum value of 23 nm at a reaction temperature of 150 °C. A significant purification technique was conducted for the final product at a reaction temperature of 150 °C with two different speeds in the centrifuge to remove the heavy and light by-products. Based on these qualities, a AgNWs-based porous Si (AgNWs/P-Si) device was fabricated, and current-time pulsing was achieved using an ultra-violet (UV) irradiation of a 375 nm wavelength at four bias voltages of 1 V, 2 V, 3 V, and 4 V. We obtained a high level of sensitivity and detectivity with the values of 2247.49% and 2.89 [Formula: see text] 10(12) Jones, respectively. The photocurrent increased from the μA range in the P-Si to the mA range in the AgNWs/P-Si photodetector due to the featured surface plasmon resonance of the AgNWs compared to the other metals. |
format | Online Article Text |
id | pubmed-9863988 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-98639882023-01-22 Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector Alqanoo, Anas A. M. Ahmed, Naser M. Hashim, Md. R. Almessiere, Munirah A. Taya, Sofyan A. Alsadig, Ahmed Aldaghri, Osamah A. Ibnaouf, Khalid Hassan Nanomaterials (Basel) Article The applications of silver nanowires (AgNWs) are clearly relevant to their purity and morphology. Therefore, the synthesis parameters should be precisely adjusted in order to obtain AgNWs with a high aspect ratio. Consequently, controlling the reaction time versus the reaction temperature of the AgNWs is crucial to synthesize AgNWs with a high crystallinity and is important in fabricating optoelectronic devices. In this work, we tracked the morphological alterations of AgNWs during the growth process in order to determine the optimal reaction time and temperature. Thus, here, the UV–Vis absorption spectra were used to investigate how the reaction time varies with the temperature. The reaction was conducted at five different temperatures, 140–180 °C. As a result, an equation was developed to describe the relationship between them and to calculate the reaction time at any given reaction temperature. It was observed that the average diameter of the NWs was temperature-dependent and had a minimum value of 23 nm at a reaction temperature of 150 °C. A significant purification technique was conducted for the final product at a reaction temperature of 150 °C with two different speeds in the centrifuge to remove the heavy and light by-products. Based on these qualities, a AgNWs-based porous Si (AgNWs/P-Si) device was fabricated, and current-time pulsing was achieved using an ultra-violet (UV) irradiation of a 375 nm wavelength at four bias voltages of 1 V, 2 V, 3 V, and 4 V. We obtained a high level of sensitivity and detectivity with the values of 2247.49% and 2.89 [Formula: see text] 10(12) Jones, respectively. The photocurrent increased from the μA range in the P-Si to the mA range in the AgNWs/P-Si photodetector due to the featured surface plasmon resonance of the AgNWs compared to the other metals. MDPI 2023-01-15 /pmc/articles/PMC9863988/ /pubmed/36678106 http://dx.doi.org/10.3390/nano13020353 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Alqanoo, Anas A. M. Ahmed, Naser M. Hashim, Md. R. Almessiere, Munirah A. Taya, Sofyan A. Alsadig, Ahmed Aldaghri, Osamah A. Ibnaouf, Khalid Hassan Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector |
title | Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector |
title_full | Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector |
title_fullStr | Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector |
title_full_unstemmed | Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector |
title_short | Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector |
title_sort | synthesis and deposition of silver nanowires on porous silicon as an ultraviolet light photodetector |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863988/ https://www.ncbi.nlm.nih.gov/pubmed/36678106 http://dx.doi.org/10.3390/nano13020353 |
work_keys_str_mv | AT alqanooanasam synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT ahmednaserm synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT hashimmdr synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT almessieremuniraha synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT tayasofyana synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT alsadigahmed synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT aldaghriosamaha synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector AT ibnaoufkhalidhassan synthesisanddepositionofsilvernanowiresonporoussiliconasanultravioletlightphotodetector |